Single Walled Carbon Nanotubes Array on Monocrystal Silicon, Height: 95 µm
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- NG01SC0101
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Description
1 cm^2/1205 €
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Single Walled Carbon Nanotubes Array on Monocrystal Silicon
Height: 95 µm
Technical Properties:
SWCNT Purity | 99 wt% |
Carbon Nanotube | >99.5% |
SWCNT Outside Diameter | 1-3 nm |
SWCNT Inside Diameter | 0.6-1.8 nm |
SWCNT Array on Monocrystal Silicon Height | 95 µm |
SWCNT Array on Monocrystal Silicon Density | <0.30 g/cm3 |
SWCNT Array on Monocrystal Silicon SSA | 28 m2/g |
SWCNT Array on Monocrystal Silicon Electrical Conductivity | 1100 S/m |
Applications:
Single Walled Carbon Nanotubes Array on Monocrystal Silicon shows high electric conductivity. It has also high ability to efficiently dissipate
heat due to its large surface area. These unique properties show high potential in microelectronics, sensors, and power applications.