Lead Sulfide Quantum Dots (PbS QD) 1450 nm

Lead Sulfide (PbS) Quantum Dots, optimized for a 1450 nm peak emission, are high-performance semiconductor nanocrystals engineered to dominate the Short-Wave Infrared (SWIR) spectrum. PbS QDs are characterized by an exceptionally large Bohr exciton radius, granting them unparalleled size-tunability and high absorption cross-sections. At 1450 nm, these dots operate within a critical infrared window, providing high-efficiency photon management and superior charge carrier dynamics. Their unique photophysical properties, including efficient Multiple Exciton Generation (MEG), make them indispensable for overcoming the Shockley-Queisser limit in next-generation photovoltaics. Synthesized with meticulous control over monodispersity, our PbS QDs deliver narrow emission profiles and exceptional photostability, serving as a robust platform for advanced optoelectronic integration and high-sensitivity infrared detection.

Applications

• SWIR Photodetectors: Utilized as the active material in high-speed, high-sensitivity infrared cameras and sensors for applications in remote sensing, night vision, and autonomous vehicle LIDAR systems.
• Next-Generation Photovoltaics: Integrated into quantum dot solar cells to capture low-energy infrared photons that pass through conventional silicon cells, significantly boosting overall solar harvesting efficiency.
• Deep-Tissue NIR-II Bioimaging: Acts as an advanced fluorescent probe for in-vivo imaging; the 1450 nm emission allows for deeper penetration into biological tissues with minimal scattering and background interference.
• Infrared Light Emitting Diodes (LEDs): Employed in the fabrication of specialized SWIR emitters for non-destructive industrial testing, moisture detection, and medical diagnostics.
• Optical Gas Sensing: Applied in the detection of greenhouse gases and industrial pollutants (such as ammonia or hydrocarbons) that exhibit specific absorption "fingerprints" in the infrared region.
• Solution-Processed Transistors: Used as a high-mobility semiconductor layer in thin-film transistors (TFTs) for the development of flexible, transparent, and large-area electronic circuits.
• Electrocatalysis & Energy Storage: Leveraged in high-surface-area catalysts to enhance electron transfer processes in fuel cells and advanced electrochemical sensing devices.